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KMID : 0380319910470000061
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Journal of Korean Research Institute for Better Living
1991 Volume.47 No. 0 p.61 ~ p.64
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The Se Concentration Dependence of the Electrical Conductivity of Amorphous AeGeSex Film
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Abstract
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D.C. electrical conductivity on amorphous AsGeSex film for the Se concentrations of 52.2, 55.6, 63.6, 79 at.％ is investigated.
The thin film samples are prepared by the thermal evaporation form bulk material obtained by melt quenching.
D.C. conductivity is proportional to inverse of temperature and satisfies the relation σ=σ_0 exp(-△Ea/kT). Over the temperature range from about 230K∼370K, the D.C. conductivities of the investigated samples are between 2.5×10 exp(-9)(Ω^-1em^-1) to 7.0×10 exp(-13)(Ω^-1 cm^-1). D.C. conductivty increases with increases of Se concentration. And the activation energy of conductivity decrease with increase of Se concentration.
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